AONS32310 MOSFET Datasheet: N-Ch, 30V, 400A. Full specification with pinout and replacement list

AONS32310 Specs and Replacement

Type Designator: AONS32310

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 400 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 1430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00105 Ohm

Package: DFN5X6-8L

AONS32310 substitution

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AONS32310 datasheet

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AONS32310 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONS32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

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AONS32302 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

7.2. Size:387K aosemi
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AONS32306 30V N-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒