All MOSFET. AONS34304C Datasheet

 

AONS34304C Datasheet and Replacement


   Type Designator: AONS34304C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 3350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00068 Ohm
   Package: DFN5X6-8L
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AONS34304C Datasheet (PDF)

 ..1. Size:405K  aosemi
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AONS34304C

AONS34304C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:436K  aosemi
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AONS34304C

AONS34308C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:405K  aosemi
aons30300.pdf pdf_icon

AONS34304C

AONS3030030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V)

 9.2. Size:769K  aosemi
aons38108.pdf pdf_icon

AONS34304C

AONS3810825V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Extremely Low RDS(ON) ID (at VGS=10V) 355A Optimized switching performance (low RDS(ON)*Qg) RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE60NF200D | LSB60R070HT | SVFP7N70MJ | 2SK162 | AS2341 | DE275X2-501N16A | IXFC80N10

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