AONS34304C
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AONS34304C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 208
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 200
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 42
ns
Cossⓘ - Выходная емкость: 3350
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00068
Ohm
Тип корпуса:
DFN5X6-8L
Аналог (замена) для AONS34304C
-
подбор ⓘ MOSFET транзистора по параметрам
AONS34304C
Datasheet (PDF)
..1. Size:405K aosemi
aons34304c.pdf 
AONS34304C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
6.1. Size:436K aosemi
aons34308c.pdf 
AONS34308C30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:405K aosemi
aons30300.pdf 
AONS3030030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V)
9.2. Size:769K aosemi
aons38108.pdf 
AONS3810825V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Extremely Low RDS(ON) ID (at VGS=10V) 355A Optimized switching performance (low RDS(ON)*Qg) RDS(ON) (at VGS=10V)
9.3. Size:384K aosemi
aons32314.pdf 
AONS3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 32A High Current capability RDS(ON) (at VGS=10V)
9.4. Size:573K aosemi
aons36348.pdf 
AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:693K aosemi
aons32302.pdf 
AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:634K aosemi
aons32310.pdf 
AONS3231030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:574K aosemi
aons36346.pdf 
AONS3634630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:387K aosemi
aons32306.pdf 
AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)
9.9. Size:414K aosemi
aons36314.pdf 
AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:408K aosemi
aons36308.pdf 
AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:633K aosemi
aons32100.pdf 
AONS3210025V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 25V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)
9.12. Size:416K aosemi
aons36303.pdf 
AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
9.13. Size:406K aosemi
aons36302.pdf 
AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)
9.14. Size:406K aosemi
aons36304.pdf 
AONS3630430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.15. Size:398K aosemi
aons36337.pdf 
AONS3633730V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 59A Low Gate Charge RDS(ON) (at VGS=10V)
9.16. Size:420K aosemi
aons32106.pdf 
AONS3210620V N-Channel MOSFETGeneral Description Product SummaryVDS20V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
9.17. Size:576K aosemi
aons36312.pdf 
AONS3631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.18. Size:403K aosemi
aons32303.pdf 
AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)
9.19. Size:754K aosemi
aons32304.pdf 
AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)
9.20. Size:419K aosemi
aons36333.pdf 
AONS3633330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 79A Low Gate Charge RDS(ON) (at VGS=10V)
9.21. Size:468K aosemi
aons30302.pdf 
AONS3030230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 480A Low Gate Charge RDS(ON) (at VGS=10V)
9.22. Size:596K aosemi
aons36316.pdf 
AONS3631630V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
9.23. Size:409K aosemi
aons36306.pdf 
AONS3630630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 63A Low Gate Charge RDS(ON) (at VGS=10V)
9.24. Size:406K aosemi
aons38203.pdf 
AONS3820325V N-Channel MOSFETGeneral Description Product SummaryVDS25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 311A Low Gate Charge RDS(ON) (at VGS=10V)
9.25. Size:402K aosemi
aons36335.pdf 
AONS3633530V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 61A Low Gate Charge RDS(ON) (at VGS=10V)
9.26. Size:414K aosemi
aons30306.pdf 
AONS3030630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 302A High Current Capability RDS(ON) (at VGS=10V)
9.27. Size:424K aosemi
aons36321.pdf 
AONS3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 88A Low Gate Charge RDS(ON) (at VGS=10V)
Другие MOSFET... AONS30302
, AONS30306
, AONS32100
, AONS32106
, AONS32302
, AONS32303
, AONS32304
, AONS32310
, 18N50
, AONS34308C
, AONS36302
, AONS36303
, AONS36304
, AONS36306
, AONS36308
, AONS36312
, AONS36314
.
