AONS36302 Datasheet and Replacement
Type Designator: AONS36302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 146 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1020 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: DFN5X6-8L
AONS36302 substitution
AONS36302 Datasheet (PDF)
aons36302.pdf

AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)
aons36308.pdf

AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)
aons36303.pdf

AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
aons36304.pdf

AONS3630430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONS32100 , AONS32106 , AONS32302 , AONS32303 , AONS32304 , AONS32310 , AONS34304C , AONS34308C , STF13NM60N , AONS36303 , AONS36304 , AONS36306 , AONS36308 , AONS36312 , AONS36314 , AONS36316 , AONS36321 .
History: TSF16N60MR | HGP115N15S | XP161 | IRF832FI | SIS439DNT | PHU78NQ03LT | SSF3639C
Keywords - AONS36302 MOSFET datasheet
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History: TSF16N60MR | HGP115N15S | XP161 | IRF832FI | SIS439DNT | PHU78NQ03LT | SSF3639C



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