AONS36303 Specs and Replacement

Type Designator: AONS36303

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 83 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00328 Ohm

Package: DFN5X6-8L

AONS36303 substitution

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AONS36303 datasheet

 ..1. Size:416K  aosemi
 aons36303.pdf pdf_icon

AONS36303

AONS36303 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:408K  aosemi
 aons36308.pdf pdf_icon

AONS36303

AONS36308 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:406K  aosemi
 aons36302.pdf pdf_icon

AONS36303

AONS36302 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:406K  aosemi
 aons36304.pdf pdf_icon

AONS36303

AONS36304 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS32106, AONS32302, AONS32303, AONS32304, AONS32310, AONS34304C, AONS34308C, AONS36302, IRF1407, AONS36304, AONS36306, AONS36308, AONS36312, AONS36314, AONS36316, AONS36321, AONS36333

Keywords - AONS36303 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs