All MOSFET. AONS36306 Datasheet

 

AONS36306 Datasheet and Replacement


   Type Designator: AONS36306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN5X6-8L
 

 AONS36306 substitution

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AONS36306 Datasheet (PDF)

 ..1. Size:409K  aosemi
 aons36306.pdf pdf_icon

AONS36306

AONS3630630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 63A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:408K  aosemi
 aons36308.pdf pdf_icon

AONS36306

AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:416K  aosemi
 aons36303.pdf pdf_icon

AONS36306

AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:406K  aosemi
 aons36302.pdf pdf_icon

AONS36306

AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONS32303 , AONS32304 , AONS32310 , AONS34304C , AONS34308C , AONS36302 , AONS36303 , AONS36304 , 75N75 , AONS36308 , AONS36312 , AONS36314 , AONS36316 , AONS36321 , AONS36333 , AONS36335 , AONS36337 .

History: 2SK3502-01MR | AP4511GM

Keywords - AONS36306 MOSFET datasheet

 AONS36306 cross reference
 AONS36306 equivalent finder
 AONS36306 lookup
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