AONS36312 MOSFET Datasheet: N-Ch, 30V, 85A. Full specification with pinout and replacement list

AONS36312 Specs and Replacement

Type Designator: AONS36312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: DFN5X6-8L

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AONS36312 datasheet

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AONS36312 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONS36314 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONS36316 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONS36348 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒