AONS36316 Datasheet and Replacement
Type Designator: AONS36316
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: DFN5X6-8L
AONS36316 substitution
AONS36316 Datasheet (PDF)
aons36316.pdf

AONS3631630V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aons36314.pdf

AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aons36312.pdf

AONS3631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aons36348.pdf

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONS34308C , AONS36302 , AONS36303 , AONS36304 , AONS36306 , AONS36308 , AONS36312 , AONS36314 , 4N60 , AONS36321 , AONS36333 , AONS36335 , AONS36337 , AONS36346 , AONS36348 , AONS38108 , AONS38203 .
History: SGW080N055 | IRFR5305TRPBF | TPU60R3K4C | AONS36314 | MESS84 | AOSS32136C
Keywords - AONS36316 MOSFET datasheet
AONS36316 cross reference
AONS36316 equivalent finder
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History: SGW080N055 | IRFR5305TRPBF | TPU60R3K4C | AONS36314 | MESS84 | AOSS32136C



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