All MOSFET. AONS36316 Datasheet

 

AONS36316 Datasheet and Replacement


   Type Designator: AONS36316
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: DFN5X6-8L
 

 AONS36316 substitution

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AONS36316 Datasheet (PDF)

 ..1. Size:596K  aosemi
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AONS36316

AONS3631630V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:414K  aosemi
aons36314.pdf pdf_icon

AONS36316

AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:576K  aosemi
aons36312.pdf pdf_icon

AONS36316

AONS3631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:573K  aosemi
aons36348.pdf pdf_icon

AONS36316

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AONS34308C , AONS36302 , AONS36303 , AONS36304 , AONS36306 , AONS36308 , AONS36312 , AONS36314 , 7N60 , AONS36321 , AONS36333 , AONS36335 , AONS36337 , AONS36346 , AONS36348 , AONS38108 , AONS38203 .

History: AONS36304

Keywords - AONS36316 MOSFET datasheet

 AONS36316 cross reference
 AONS36316 equivalent finder
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