AONS36321 Datasheet and Replacement
Type Designator: AONS36321
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.8 nS
Cossⓘ - Output Capacitance: 275 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: DFN5X6-8L
AONS36321 substitution
AONS36321 Datasheet (PDF)
aons36321.pdf

AONS3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 88A Low Gate Charge RDS(ON) (at VGS=10V)
aons36348.pdf

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aons36346.pdf

AONS3634630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
aons36314.pdf

AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONS36302 , AONS36303 , AONS36304 , AONS36306 , AONS36308 , AONS36312 , AONS36314 , AONS36316 , 75N75 , AONS36333 , AONS36335 , AONS36337 , AONS36346 , AONS36348 , AONS38108 , AONS38203 , AONS420A60 .
History: IXTK20N150 | CED540N | PJW1NA50 | SWP060R65E7T | KF9N50P | ELM322806A | WMM14N70C4
Keywords - AONS36321 MOSFET datasheet
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History: IXTK20N150 | CED540N | PJW1NA50 | SWP060R65E7T | KF9N50P | ELM322806A | WMM14N70C4



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