AONS36321 Datasheet and Replacement
Type Designator: AONS36321
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1.8 nS
Cossⓘ - Output Capacitance: 275 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: DFN5X6-8L
- MOSFET Cross-Reference Search
AONS36321 Datasheet (PDF)
aons36321.pdf

AONS3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 88A Low Gate Charge RDS(ON) (at VGS=10V)
aons36348.pdf

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aons36346.pdf

AONS3634630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
aons36314.pdf

AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2SK315 | IPD60R280P7S | 2SK1609 | MTB17A03Q8 | 2SK2231 | SVS11N70MJD2 | IRF7490PBF
Keywords - AONS36321 MOSFET datasheet
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History: 2SK315 | IPD60R280P7S | 2SK1609 | MTB17A03Q8 | 2SK2231 | SVS11N70MJD2 | IRF7490PBF



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