All MOSFET. AONS36333 Datasheet

 

AONS36333 Datasheet and Replacement


   Type Designator: AONS36333
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 79 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: DFN5X6-8L
 

 AONS36333 substitution

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AONS36333 Datasheet (PDF)

 ..1. Size:419K  aosemi
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AONS36333

AONS3633330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 79A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:398K  aosemi
aons36337.pdf pdf_icon

AONS36333

AONS3633730V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 59A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:402K  aosemi
aons36335.pdf pdf_icon

AONS36333

AONS3633530V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 61A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:573K  aosemi
aons36348.pdf pdf_icon

AONS36333

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AONS36303 , AONS36304 , AONS36306 , AONS36308 , AONS36312 , AONS36314 , AONS36316 , AONS36321 , 2N60 , AONS36335 , AONS36337 , AONS36346 , AONS36348 , AONS38108 , AONS38203 , AONS420A60 , AONS420A70 .

History: PSMN2R0-60PS | APM7314

Keywords - AONS36333 MOSFET datasheet

 AONS36333 cross reference
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