Справочник MOSFET. AONS36333

 

AONS36333 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AONS36333
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 79 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для AONS36333

 

 

AONS36333 Datasheet (PDF)

 ..1. Size:419K  aosemi
 aons36333.pdf

AONS36333 AONS36333

AONS3633330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 79A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:398K  aosemi
 aons36337.pdf

AONS36333 AONS36333

AONS3633730V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 59A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:402K  aosemi
 aons36335.pdf

AONS36333 AONS36333

AONS3633530V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 61A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:573K  aosemi
 aons36348.pdf

AONS36333 AONS36333

AONS3634830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:574K  aosemi
 aons36346.pdf

AONS36333 AONS36333

AONS3634630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)

 7.3. Size:414K  aosemi
 aons36314.pdf

AONS36333 AONS36333

AONS3631430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 7.4. Size:408K  aosemi
 aons36308.pdf

AONS36333 AONS36333

AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)

 7.5. Size:416K  aosemi
 aons36303.pdf

AONS36333 AONS36333

AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

 7.6. Size:406K  aosemi
 aons36302.pdf

AONS36333 AONS36333

AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)

 7.7. Size:406K  aosemi
 aons36304.pdf

AONS36333 AONS36333

AONS3630430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 7.8. Size:576K  aosemi
 aons36312.pdf

AONS36333 AONS36333

AONS3631230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 7.9. Size:596K  aosemi
 aons36316.pdf

AONS36333 AONS36333

AONS3631630V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

 7.10. Size:409K  aosemi
 aons36306.pdf

AONS36333 AONS36333

AONS3630630V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 63A Low Gate Charge RDS(ON) (at VGS=10V)

 7.11. Size:424K  aosemi
 aons36321.pdf

AONS36333 AONS36333

AONS3632130V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 88A Low Gate Charge RDS(ON) (at VGS=10V)

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