AONS38108 Specs and Replacement

Type Designator: AONS38108

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 355 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: DFN5X6-8L

AONS38108 substitution

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AONS38108 datasheet

 ..1. Size:769K  aosemi
aons38108.pdf pdf_icon

AONS38108

AONS38108 25V N-Channel MOSFET General Description Product Summary VDS 25V Trench Power MOSFET technology Extremely Low RDS(ON) ID (at VGS=10V) 355A Optimized switching performance (low RDS(ON)*Qg) RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:406K  aosemi
aons38203.pdf pdf_icon

AONS38108

AONS38203 25V N-Channel MOSFET General Description Product Summary VDS 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 311A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:405K  aosemi
aons30300.pdf pdf_icon

AONS38108

AONS30300 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 710A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:405K  aosemi
aons34304c.pdf pdf_icon

AONS38108

AONS34304C 30V N-Channel MOSFET General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS36314, AONS36316, AONS36321, AONS36333, AONS36335, AONS36337, AONS36346, AONS36348, 2N60, AONS38203, AONS420A60, AONS420A70, AONS520A70, AONS62530, AONS62606, AONS62614T, AONS62920

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