AONS520A70 Datasheet and Replacement
Type Designator: AONS520A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: DFN5X6-8L
AONS520A70 substitution
AONS520A70 Datasheet (PDF)
aons520a70.pdf

AONS520A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONS36335 , AONS36337 , AONS36346 , AONS36348 , AONS38108 , AONS38203 , AONS420A60 , AONS420A70 , RU6888R , AONS62530 , AONS62606 , AONS62614T , AONS62920 , AONS65625 , AONS660A60 , AONS660A70F , AONS66402T .
History: IXFT36N60P | JMSH1565AUS | LSI1012LT1G
Keywords - AONS520A70 MOSFET datasheet
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History: IXFT36N60P | JMSH1565AUS | LSI1012LT1G



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