AONS520A70 Specs and Replacement
Type Designator: AONS520A70
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: DFN5X6-8L
AONS520A70 substitution
- MOSFET ⓘ Cross-Reference Search
AONS520A70 datasheet
aons520a70.pdf
AONS520A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AONS36335, AONS36337, AONS36346, AONS36348, AONS38108, AONS38203, AONS420A60, AONS420A70, AO3400A, AONS62530, AONS62606, AONS62614T, AONS62920, AONS65625, AONS660A60, AONS660A70F, AONS66402T
Keywords - AONS520A70 MOSFET specs
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