AONS62530 MOSFET Datasheet: N-Ch, 150V, 19A. Full specification with pinout and replacement list

AONS62530 Specs and Replacement

Type Designator: AONS62530

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: DFN5X6-8L

AONS62530 substitution

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AONS62530 datasheet

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AONS62530 TM 150V N-Channel MOS General Description Product Summary VDS 150V Latest Trench Power MOS ( MOS MV) technology Low Gate Charge ID (at VGS=10V) 19A Optimized for fast-switching applications RDS(ON) (at VGS=10V) ... See More ⇒

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AONS62922 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

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AONS62606 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒