All MOSFET. AONS62530 Datasheet

 

AONS62530 Datasheet and Replacement


   Type Designator: AONS62530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: DFN5X6-8L
 

 AONS62530 substitution

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AONS62530 Datasheet (PDF)

 ..1. Size:493K  aosemi
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AONS62530

AONS62530TM150V N-Channel MOSGeneral Description Product SummaryVDS150V Latest Trench Power MOS (MOS MV) technology Low Gate Charge ID (at VGS=10V) 19A Optimized for fast-switching applications RDS(ON) (at VGS=10V)

 8.1. Size:336K  1
aons62922.pdf pdf_icon

AONS62530

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 8.2. Size:336K  aosemi
aons62922.pdf pdf_icon

AONS62530

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 8.3. Size:364K  aosemi
aons62606.pdf pdf_icon

AONS62530

AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

Datasheet: AONS36337 , AONS36346 , AONS36348 , AONS38108 , AONS38203 , AONS420A60 , AONS420A70 , AONS520A70 , IRF730 , AONS62606 , AONS62614T , AONS62920 , AONS65625 , AONS660A60 , AONS660A70F , AONS66402T , AONS66405 .

History: PJP6NA40 | IRFP22N60K | NCEP0135AF | AP9510GM | AOT416

Keywords - AONS62530 MOSFET datasheet

 AONS62530 cross reference
 AONS62530 equivalent finder
 AONS62530 lookup
 AONS62530 substitution
 AONS62530 replacement

 

 
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