FCU5N60 Datasheet and Replacement
Type Designator: FCU5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO251 IPAK
- MOSFET Cross-Reference Search
FCU5N60 Datasheet (PDF)
fcd5n60 fcu5n60.pdf

December 2008 TMSuperFETFCD5N60 / FCU5N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.81balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc
fcu5n60.pdf

August 2014FCD5N60 / FCU5N60N-Channel SuperFET MOSFET600 V, 4.6 A, 950 mFeatures Description 650 V @ TJ = 150C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 810 mutilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 16 nC)resis
fcd5n60 fcu5n60.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FQPF16N25C , FQPF17N40 , FDS8690 , FQPF19N10 , FDD20AN06F085 , FQPF19N20 , HUF76429DF085 , FQPF19N20C , K3569 , FQPF20N06 , FQPF20N06L , FQPF22N30 , FQPF22P10 , FQPF27N25 , FQPF27P06 , FQPF2N60C , FCA20N60F109 .
History: IRFP21N60L | NCE2321A
Keywords - FCU5N60 MOSFET datasheet
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History: IRFP21N60L | NCE2321A



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