AONS62606 MOSFET. Datasheet pdf. Equivalent
Type Designator: AONS62606
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 195 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm
Package: DFN5X6-8L
AONS62606 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AONS62606 Datasheet (PDF)
aons62606.pdf
AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aons62602.pdf
AONS62602TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons62618.pdf
AONS62618TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons62614t.pdf
AONS62614TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 170A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons62614.pdf
AONS62614TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918