AONS65625 Specs and Replacement

Type Designator: AONS65625

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 483 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN5X6-8L

AONS65625 substitution

- MOSFET ⓘ Cross-Reference Search

 

AONS65625 datasheet

 ..1. Size:422K  aosemi
aons65625.pdf pdf_icon

AONS65625

AONS65625 60V P-Channel MOSFET General Description Product Summary VDS -60V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -42A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 9.1. Size:336K  1
aons62922.pdf pdf_icon

AONS65625

AONS62922 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:362K  aosemi
aons66402t.pdf pdf_icon

AONS65625

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

 9.3. Size:313K  aosemi
aons66916.pdf pdf_icon

AONS65625

AONS66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS38203, AONS420A60, AONS420A70, AONS520A70, AONS62530, AONS62606, AONS62614T, AONS62920, IRFZ48N, AONS660A60, AONS660A70F, AONS66402T, AONS66405, AONS66405T, AONS66407, AONS66408, AONS66415

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.