All MOSFET. AONS65625 Datasheet

 

AONS65625 Datasheet and Replacement


   Type Designator: AONS65625
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 483 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN5X6-8L
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AONS65625 Datasheet (PDF)

 ..1. Size:422K  aosemi
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AONS65625

AONS6562560V P-Channel MOSFETGeneral Description Product SummaryVDS-60V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -42A High Current Capability RDS(ON) (at VGS=-10V)

 9.1. Size:336K  1
aons62922.pdf pdf_icon

AONS65625

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 9.2. Size:362K  aosemi
aons66402t.pdf pdf_icon

AONS65625

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 9.3. Size:313K  aosemi
aons66916.pdf pdf_icon

AONS65625

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP2R803AGMT-HF | 2SJ146 | 13N50G-TQ2-T | 2SK2765-01 | 2N65KG-TF2-T | 2SK810 | 2N65KG-TF3-T

Keywords - AONS65625 MOSFET datasheet

 AONS65625 cross reference
 AONS65625 equivalent finder
 AONS65625 lookup
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