AONS660A70F Specs and Replacement

Type Designator: AONS660A70F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm

Package: DFN5X6-8L

AONS660A70F substitution

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AONS660A70F datasheet

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AONS660A70F

AONS660A70F TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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aons660a60.pdf pdf_icon

AONS660A70F

AONS660A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 8.1. Size:362K  aosemi
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AONS660A70F

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:313K  aosemi
aons66916.pdf pdf_icon

AONS660A70F

AONS66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS420A70, AONS520A70, AONS62530, AONS62606, AONS62614T, AONS62920, AONS65625, AONS660A60, IRF830, AONS66402T, AONS66405, AONS66405T, AONS66407, AONS66408, AONS66415, AONS66520, AONS66521

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs