AONS66605 Specs and Replacement

Type Designator: AONS66605

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: DFN5X6-8L

AONS66605 substitution

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AONS66605 datasheet

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AONS66605

AONS66605 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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 aons66609.pdf pdf_icon

AONS66605

AONS66609 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:436K  aosemi
 aons66607.pdf pdf_icon

AONS66605

AONS66607 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:416K  aosemi
 aons66609t.pdf pdf_icon

AONS66605

AONS66609T TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS66405, AONS66405T, AONS66407, AONS66408, AONS66415, AONS66520, AONS66521, AONS66524, AO4407A, AONS66607, AONS66609, AONS66609T, AONS66612, AONS66612T, AONS66613, AONS66614, AONS66615

Keywords - AONS66605 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.