AONS66609T Specs and Replacement

Type Designator: AONS66609T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 258 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 313 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm

Package: DFN5X6-8L

AONS66609T substitution

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AONS66609T datasheet

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AONS66609T

AONS66609T TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONS66609T

AONS66609 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aons66607.pdf pdf_icon

AONS66609T

AONS66607 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:440K  aosemi
 aons66605.pdf pdf_icon

AONS66609T

AONS66605 60V N-Channel MOSFET General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS66408, AONS66415, AONS66520, AONS66521, AONS66524, AONS66605, AONS66607, AONS66609, AO4468, AONS66612, AONS66612T, AONS66613, AONS66614, AONS66615, AONS66615T, AONS66617, AONS66620

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