AONS66609T Datasheet and Replacement
Type Designator: AONS66609T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 258 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 313 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
Package: DFN5X6-8L
AONS66609T substitution
AONS66609T Datasheet (PDF)
aons66609t.pdf

AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66609.pdf

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66607.pdf

AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aons66605.pdf

AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 , AONS66605 , AONS66607 , AONS66609 , IRFP064N , AONS66612 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T , AONS66617 , AONS66620 .
History: 2SK3799
Keywords - AONS66609T MOSFET datasheet
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History: 2SK3799



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