All MOSFET. AONS66609T Datasheet

 

AONS66609T Datasheet and Replacement


   Type Designator: AONS66609T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 258 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 313 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
   Package: DFN5X6-8L
      - MOSFET Cross-Reference Search

 

AONS66609T Datasheet (PDF)

 ..1. Size:416K  aosemi
 aons66609t.pdf pdf_icon

AONS66609T

AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:412K  aosemi
 aons66609.pdf pdf_icon

AONS66609T

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:436K  aosemi
 aons66607.pdf pdf_icon

AONS66609T

AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.2. Size:440K  aosemi
 aons66605.pdf pdf_icon

AONS66609T

AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

SHOW MORE

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1571 | IRF7473

Keywords - AONS66609T MOSFET datasheet

 AONS66609T cross reference
 AONS66609T equivalent finder
 AONS66609T lookup
 AONS66609T substitution
 AONS66609T replacement

 

 
Back to Top

 


 
.