AONS66612T Specs and Replacement

Type Designator: AONS66612T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 275 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00165 Ohm

Package: DFN5X6-8L

AONS66612T substitution

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AONS66612T datasheet

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AONS66612T

AONS66612T TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONS66612T

AONS66612 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66612T

AONS66615 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66612T

AONS66617 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260 C reflow 175 C Junction temperature RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS66520, AONS66521, AONS66524, AONS66605, AONS66607, AONS66609, AONS66609T, AONS66612, IRFZ44N, AONS66613, AONS66614, AONS66615, AONS66615T, AONS66617, AONS66620, AONS66641, AONS66641T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.