All MOSFET. AONS66612T Datasheet

 

AONS66612T Datasheet and Replacement


   Type Designator: AONS66612T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 275 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00165 Ohm
   Package: DFN5X6-8L
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AONS66612T Datasheet (PDF)

 ..1. Size:715K  aosemi
 aons66612t.pdf pdf_icon

AONS66612T

AONS66612TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:377K  aosemi
 aons66612.pdf pdf_icon

AONS66612T

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.1. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66612T

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66612T

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

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History: 15N70 | NVMFS5C673NL | BSS84KR | 2N65KG-TF2-T | 2SK810 | 2N65KG-TF3-T | 2SJ146

Keywords - AONS66612T MOSFET datasheet

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