AONS66614 Specs and Replacement

Type Designator: AONS66614

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: DFN5X6-8L

AONS66614 substitution

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AONS66614 datasheet

 ..1. Size:720K  aosemi
 aons66614.pdf pdf_icon

AONS66614

AONS66614 60V N-Channel AlphaSGT TM General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:377K  aosemi
 aons66612.pdf pdf_icon

AONS66614

AONS66612 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66614

AONS66615 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66614

AONS66617 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260 C reflow 175 C Junction temperature RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS66524, AONS66605, AONS66607, AONS66609, AONS66609T, AONS66612, AONS66612T, AONS66613, IRF740, AONS66615, AONS66615T, AONS66617, AONS66620, AONS66641, AONS66641T, AONS66811, AONS66814

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