All MOSFET. AONS66615T Datasheet

 

AONS66615T Datasheet and Replacement


   Type Designator: AONS66615T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 114 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6-8L
 

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AONS66615T Datasheet (PDF)

 ..1. Size:428K  aosemi
 aons66615t.pdf pdf_icon

AONS66615T

AONS66615TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 114A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66615T

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:377K  aosemi
 aons66612.pdf pdf_icon

AONS66615T

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.2. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66615T

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

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Datasheet: AONS66607 , AONS66609 , AONS66609T , AONS66612 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , 20N60 , AONS66617 , AONS66620 , AONS66641 , AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 .

History: BUK7624-55A | UPA2766T1A

Keywords - AONS66615T MOSFET datasheet

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