AONS66920 Specs and Replacement

Type Designator: AONS66920

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 485 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: DFN5X6-8L

AONS66920 substitution

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AONS66920 datasheet

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AONS66920

AONS66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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aons66923.pdf pdf_icon

AONS66920

AONS66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:313K  aosemi
aons66916.pdf pdf_icon

AONS66920

AONS66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:314K  aosemi
aons66966.pdf pdf_icon

AONS66920

AONS66966 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS66814, AONS66817, AONS66908, AONS66909, AONS66916T, AONS66917, AONS66917T, AONS66919, IRF3710, AONS66923, AONS67614, AONS68520, AONS74304, AONS74306, AONS74312, AONS77402, AONS850A70

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