All MOSFET. AONS66923 Datasheet

 

AONS66923 Datasheet and Replacement


   Type Designator: AONS66923
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: DFN5X6-8L
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AONS66923 Datasheet (PDF)

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 aons66923.pdf pdf_icon

AONS66923

AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:762K  aosemi
 aons66920.pdf pdf_icon

AONS66923

AONS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.1. Size:313K  aosemi
 aons66916.pdf pdf_icon

AONS66923

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:340K  aosemi
 aons66917t.pdf pdf_icon

AONS66923

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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Keywords - AONS66923 MOSFET datasheet

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