All MOSFET. AONS66923 Datasheet

 

AONS66923 Datasheet and Replacement


   Type Designator: AONS66923
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: DFN5X6-8L
 

 AONS66923 substitution

   - MOSFET ⓘ Cross-Reference Search

 

AONS66923 Datasheet (PDF)

 ..1. Size:771K  aosemi
 aons66923.pdf pdf_icon

AONS66923

AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:762K  aosemi
 aons66920.pdf pdf_icon

AONS66923

AONS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.1. Size:313K  aosemi
 aons66916.pdf pdf_icon

AONS66923

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:340K  aosemi
 aons66917t.pdf pdf_icon

AONS66923

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

SHOW MORE

Datasheet: AONS66817 , AONS66908 , AONS66909 , AONS66916T , AONS66917 , AONS66917T , AONS66919 , AONS66920 , IRFB4227 , AONS67614 , AONS68520 , AONS74304 , AONS74306 , AONS74312 , AONS77402 , AONS850A70 , AONX36320 .

History: BLM12P03-R

Keywords - AONS66923 MOSFET datasheet

 AONS66923 cross reference
 AONS66923 equivalent finder
 AONS66923 lookup
 AONS66923 substitution
 AONS66923 replacement

 

 
Back to Top

 


 
.