Справочник MOSFET. AONS66923

 

AONS66923 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AONS66923
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0108 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для AONS66923

 

 

AONS66923 Datasheet (PDF)

 ..1. Size:771K  aosemi
aons66923.pdf

AONS66923
AONS66923

AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:762K  aosemi
aons66920.pdf

AONS66923
AONS66923

AONS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.1. Size:313K  aosemi
aons66916.pdf

AONS66923
AONS66923

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:340K  aosemi
aons66917t.pdf

AONS66923
AONS66923

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.3. Size:416K  aosemi
aons66908.pdf

AONS66923
AONS66923

AONS66908TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.4. Size:419K  aosemi
aons66919.pdf

AONS66923
AONS66923

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.5. Size:336K  aosemi
aons66917.pdf

AONS66923
AONS66923

AONS66917TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 7.6. Size:422K  aosemi
aons66909.pdf

AONS66923
AONS66923

AONS66909TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V)

 7.7. Size:345K  aosemi
aons66916t.pdf

AONS66923
AONS66923

AONS66916TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 184A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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