AONX36322 MOSFET Datasheet: N-Ch, 30V, 85A. Full specification with pinout and replacement list

AONX36322 Specs and Replacement

Type Designator: AONX36322

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm

Package: DFN5X6-8L

AONX36322 substitution

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AONX36322 datasheet

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AONX36322 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONX36324 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONX36320 TM 30V Dual Asymmetric N-Channel XSPairFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONX38320 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒