All MOSFET. AONX36322 Datasheet

 

AONX36322 Datasheet and Replacement


   Type Designator: AONX36322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm
   Package: DFN5X6-8L
 

 AONX36322 substitution

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AONX36322 Datasheet (PDF)

 ..1. Size:1214K  aosemi
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AONX36322

AONX3632230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:1027K  aosemi
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AONX36322

AONX3632430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:563K  aosemi
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AONX36322

AONX36320TM30V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:539K  aosemi
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AONX36322

AONX3832030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONS67614 , AONS68520 , AONS74304 , AONS74306 , AONS74312 , AONS77402 , AONS850A70 , AONX36320 , K3569 , AONX36324 , AONX38168 , AONX38168A , AONX38320 , AONY36302 , AONY36304 , AONY36354 , AONY36306 .

History: 2SK2928 | AP9466GJ | 2SK2912 | JCS2N70RH | NCEP008NH40AGU | BUK7507-30B | BUK7E8R3-40E

Keywords - AONX36322 MOSFET datasheet

 AONX36322 cross reference
 AONX36322 equivalent finder
 AONX36322 lookup
 AONX36322 substitution
 AONX36322 replacement

 

 
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