All MOSFET. AONX36322 Datasheet

 

AONX36322 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONX36322
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm
   Package: DFN5X6-8L

 AONX36322 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONX36322 Datasheet (PDF)

 ..1. Size:1214K  aosemi
 aonx36322.pdf

AONX36322 AONX36322

AONX3632230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:1027K  aosemi
 aonx36324.pdf

AONX36322 AONX36322

AONX3632430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:563K  aosemi
 aonx36320.pdf

AONX36322 AONX36322

AONX36320TM30V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:539K  aosemi
 aonx38320.pdf

AONX36322 AONX36322

AONX3832030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:546K  aosemi
 aonx38168.pdf

AONX36322 AONX36322

AONX3816825V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 60A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:586K  aosemi
 aonx38168a.pdf

AONX36322 AONX36322

AONX38168A25V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 87A 226A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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