AONX36324 Specs and Replacement

Type Designator: AONX36324

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm

Package: DFN5X6-8L

AONX36324 substitution

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AONX36324 datasheet

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AONX36324

AONX36324 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aonx36322.pdf pdf_icon

AONX36324

AONX36322 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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 aonx36320.pdf pdf_icon

AONX36324

AONX36320 TM 30V Dual Asymmetric N-Channel XSPairFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:539K  aosemi
 aonx38320.pdf pdf_icon

AONX36324

AONX38320 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS68520, AONS74304, AONS74306, AONS74312, AONS77402, AONS850A70, AONX36320, AONX36322, AON7408, AONX38168, AONX38168A, AONX38320, AONY36302, AONY36304, AONY36354, AONY36306, AONY36356

Keywords - AONX36324 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs