All MOSFET. AONX38168A Datasheet

 

AONX38168A Datasheet and Replacement


   Type Designator: AONX38168A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 87 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6-8L
 

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AONX38168A Datasheet (PDF)

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AONX38168A

AONX38168A25V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 87A 226A Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:546K  aosemi
 aonx38168.pdf pdf_icon

AONX38168A

AONX3816825V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 60A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:539K  aosemi
 aonx38320.pdf pdf_icon

AONX38168A

AONX3832030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:1214K  aosemi
 aonx36322.pdf pdf_icon

AONX38168A

AONX3632230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONS74306 , AONS74312 , AONS77402 , AONS850A70 , AONX36320 , AONX36322 , AONX36324 , AONX38168 , 12N60 , AONX38320 , AONY36302 , AONY36304 , AONY36354 , AONY36306 , AONY36356 , AONZ66412 , AONV095A60 .

History: SVG104R2NT | PP1515AF | SVG103R0NT | MTDN8810T8 | AP15P10GS-HF | SVGP104R5NS | HGN012N03AL

Keywords - AONX38168A MOSFET datasheet

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