AONX38320 Datasheet and Replacement
Type Designator: AONX38320
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: DFN5X6-8L
AONX38320 substitution
AONX38320 Datasheet (PDF)
aonx38320.pdf
AONX3832030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V)
aonx38168.pdf
AONX3816825V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 60A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aonx38168a.pdf
AONX38168A25V Dual Asymmetric N-Channel XSPairFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 87A 226A Low Gate Charge RDS(ON) (at VGS=10V)
aonx36322.pdf
AONX3632230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AONS74312 , AONS77402 , AONS850A70 , AONX36320 , AONX36322 , AONX36324 , AONX38168 , AONX38168A , 2N7002 , AONY36302 , AONY36304 , AONY36354 , AONY36306 , AONY36356 , AONZ66412 , AONV095A60 , AONV110A60 .
History: IPL65R1K0C6S | MFT60N12T22FS
Keywords - AONX38320 MOSFET datasheet
AONX38320 cross reference
AONX38320 equivalent finder
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AONX38320 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPL65R1K0C6S | MFT60N12T22FS
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