AONX38320 MOSFET Datasheet: N-Ch, 30V, 66A. Full specification with pinout and replacement list

AONX38320 Specs and Replacement

Type Designator: AONX38320

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN5X6-8L

AONX38320 substitution

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AONX38320 datasheet

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AONX38320 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom Source Technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 66A 233A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONX38168 25V Dual Asymmetric N-Channel XSPairFET General Description Product Summary Q1 Q2 VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 60A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:586K aosemi
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AONX38168A 25V Dual Asymmetric N-Channel XSPairFET General Description Product Summary Q1 Q2 VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 87A 226A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

9.1. Size:1214K aosemi
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AONX36322 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒