AONY36304 Datasheet and Replacement
Type Designator: AONY36304
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 83 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 290 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: DFN5X6-8L
- MOSFET Cross-Reference Search
AONY36304 Datasheet (PDF)
aony36304.pdf

AONY3630430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 51A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aony36302.pdf

AONY3630230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 51A 85A Low Gate Charge RDS(ON) (at VGS=10V)
aony36306.pdf

AONY3630630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V)
aony36352.pdf

AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KI2301BDS | AP30H80Q | R6006JND3 | 1N70Z | PC561BA | P1850EF | MTB070P15J3
Keywords - AONY36304 MOSFET datasheet
AONY36304 cross reference
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History: KI2301BDS | AP30H80Q | R6006JND3 | 1N70Z | PC561BA | P1850EF | MTB070P15J3



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