All MOSFET. AONY36306 Datasheet

 

AONY36306 Datasheet and Replacement


   Type Designator: AONY36306
   Marking Code: 36306
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN5X6B-8L
 

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AONY36306 Datasheet (PDF)

 ..1. Size:712K  aosemi
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AONY36306

AONY3630630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:740K  aosemi
aony36302.pdf pdf_icon

AONY36306

AONY3630230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 51A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:745K  aosemi
aony36304.pdf pdf_icon

AONY36306

AONY3630430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 51A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:594K  1
aony36352.pdf pdf_icon

AONY36306

AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AONX36322 , AONX36324 , AONX38168 , AONX38168A , AONX38320 , AONY36302 , AONY36304 , AONY36354 , AO3400 , AONY36356 , AONZ66412 , AONV095A60 , AONV110A60 , AONV125A60 , AONV140A60 , AONV180A60 , AONV200A70 .

Keywords - AONY36306 MOSFET datasheet

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