AONV110A60 Specs and Replacement
Type Designator: AONV110A60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: DFN8X8-4L
AONV110A60 substitution
- MOSFET ⓘ Cross-Reference Search
AONV110A60 datasheet
aonv110a60.pdf
AONV110A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aonv125a60.pdf
AONV125A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aonv140a60.pdf
AONV140A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aonv180a60.pdf
AONV180A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AONX38320, AONY36302, AONY36304, AONY36354, AONY36306, AONY36356, AONZ66412, AONV095A60, SPP20N60C3, AONV125A60, AONV140A60, AONV180A60, AONV200A70, AONV210A60, AONV310A60, AONV420A60, AONV420A70
Keywords - AONV110A60 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPW50R199CP | TPC8408
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