AONV110A60 Datasheet and Replacement
Type Designator: AONV110A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: DFN8X8-4L
AONV110A60 substitution
AONV110A60 Datasheet (PDF)
aonv110a60.pdf
AONV110A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max
aonv125a60.pdf
AONV125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aonv140a60.pdf
AONV140A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aonv180a60.pdf
AONV180A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONX38320 , AONY36302 , AONY36304 , AONY36354 , AONY36306 , AONY36356 , AONZ66412 , AONV095A60 , SPP20N60C3 , AONV125A60 , AONV140A60 , AONV180A60 , AONV200A70 , AONV210A60 , AONV310A60 , AONV420A60 , AONV420A70 .
History: MSAFX40N30A | BL7N65B-D | AONV210A60 | IPL65R340CFD | 3SK317 | MSF7N80 | BL7N65A-A
Keywords - AONV110A60 MOSFET datasheet
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AONV110A60 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MSAFX40N30A | BL7N65B-D | AONV210A60 | IPL65R340CFD | 3SK317 | MSF7N80 | BL7N65A-A
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