AONV310A60 Datasheet and Replacement
Type Designator: AONV310A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: DFN8X8-4L
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AONV310A60 Datasheet (PDF)
aonv310a60.pdf

AONV310A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HM6804D | IRLU8721PBF | SVF4N65T | FCB11N60TM | HUFA75321D3S | 2SK1179 | IXTH21N50
Keywords - AONV310A60 MOSFET datasheet
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History: HM6804D | IRLU8721PBF | SVF4N65T | FCB11N60TM | HUFA75321D3S | 2SK1179 | IXTH21N50



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