AONV310A60 Datasheet and Replacement
Type Designator: AONV310A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: DFN8X8-4L
AONV310A60 substitution
AONV310A60 Datasheet (PDF)
aonv310a60.pdf

AONV310A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONZ66412 , AONV095A60 , AONV110A60 , AONV125A60 , AONV140A60 , AONV180A60 , AONV200A70 , AONV210A60 , 4435 , AONV420A60 , AONV420A70 , AOLF66412 , AOLF66413 , AOLF66417 , AOLF66610 , AOLF66910 , AOSN32128 .
History: SQJA00EP | AP2426GEY-HF | HM4490 | BUK7Y1R4-40H | SSM2302GN | BUK7S0R9-40H | 2SK3886-01MR
Keywords - AONV310A60 MOSFET datasheet
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History: SQJA00EP | AP2426GEY-HF | HM4490 | BUK7Y1R4-40H | SSM2302GN | BUK7S0R9-40H | 2SK3886-01MR



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