AONV420A60 Datasheet and Replacement
Type Designator: AONV420A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: DFN8X8-4L
AONV420A60 substitution
AONV420A60 Datasheet (PDF)
aonv420a60.pdf

AONV420A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
aonv420a70.pdf

AONV420A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 46A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONV095A60 , AONV110A60 , AONV125A60 , AONV140A60 , AONV180A60 , AONV200A70 , AONV210A60 , AONV310A60 , IRF530 , AONV420A70 , AOLF66412 , AOLF66413 , AOLF66417 , AOLF66610 , AOLF66910 , AOSN32128 , AOSN32338C .
History: SVG096R5NS | IXFX32N100P | PK5H3EN
Keywords - AONV420A60 MOSFET datasheet
AONV420A60 cross reference
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History: SVG096R5NS | IXFX32N100P | PK5H3EN



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