All MOSFET. AOSD21311C Datasheet

 

AOSD21311C Datasheet and Replacement


   Type Designator: AOSD21311C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SO8
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AOSD21311C Datasheet (PDF)

 ..1. Size:383K  aosemi
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AOSD21311C

AOSD21311C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V)

 6.1. Size:367K  aosemi
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AOSD21311C

AOSD21313C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:315K  aosemi
 aosd21307.pdf pdf_icon

AOSD21311C

AOSD2130730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V)

 9.1. Size:687K  aosemi
 aosd26313c.pdf pdf_icon

AOSD21311C

AOSD26313C30V Complementary MOSFETGeneral Description Product SummaryP-Channel N-Channel Latest Advanced Trench TechnologyVDS= -30V VDS= 30V Low RDS(ON)ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current CapabilityRDS(ON) RDS(ON) RoHS and Halogen-Free Compliant

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SM9992DSQG | 2SK2225 | SHDCG225715 | HMS11N70I | 2SK2180 | SVS11N70MJD2 | IRF3709LPBF

Keywords - AOSD21311C MOSFET datasheet

 AOSD21311C cross reference
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