All MOSFET. AOSD21311C Datasheet

 

AOSD21311C Datasheet and Replacement


   Type Designator: AOSD21311C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SO8
 

 AOSD21311C substitution

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AOSD21311C Datasheet (PDF)

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AOSD21311C

AOSD21311C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V)

 6.1. Size:367K  aosemi
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AOSD21311C

AOSD21313C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:315K  aosemi
 aosd21307.pdf pdf_icon

AOSD21311C

AOSD2130730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V)

 9.1. Size:687K  aosemi
 aosd26313c.pdf pdf_icon

AOSD21311C

AOSD26313C30V Complementary MOSFETGeneral Description Product SummaryP-Channel N-Channel Latest Advanced Trench TechnologyVDS= -30V VDS= 30V Low RDS(ON)ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current CapabilityRDS(ON) RDS(ON) RoHS and Halogen-Free Compliant

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Datasheet: AOLF66610 , AOLF66910 , AOSN32128 , AOSN32338C , AOSX21319C , AOSX32128 , AO4264C , AOSD21307 , IRFP250 , AOSD21313C , AOSD26313C , AOSD32334C , AOSD32338C , AOSP21321 , AOSP32320C , AOSP36326C , AOSP62530 .

History: FCP125N60E | WTC2305 | 2SK3819 | 2SK2231 | 2SK3818 | FDS89141 | 45N06

Keywords - AOSD21311C MOSFET datasheet

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 AOSD21311C equivalent finder
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