All MOSFET. AOSD21313C Datasheet

 

AOSD21313C Datasheet and Replacement


   Type Designator: AOSD21313C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SO8
 

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AOSD21313C Datasheet (PDF)

 ..1. Size:367K  aosemi
 aosd21313c.pdf pdf_icon

AOSD21313C

AOSD21313C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V)

 6.1. Size:383K  aosemi
 aosd21311c.pdf pdf_icon

AOSD21313C

AOSD21311C30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:315K  aosemi
 aosd21307.pdf pdf_icon

AOSD21313C

AOSD2130730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V)

 9.1. Size:687K  aosemi
 aosd26313c.pdf pdf_icon

AOSD21313C

AOSD26313C30V Complementary MOSFETGeneral Description Product SummaryP-Channel N-Channel Latest Advanced Trench TechnologyVDS= -30V VDS= 30V Low RDS(ON)ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current CapabilityRDS(ON) RDS(ON) RoHS and Halogen-Free Compliant

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Datasheet: AOLF66910 , AOSN32128 , AOSN32338C , AOSX21319C , AOSX32128 , AO4264C , AOSD21307 , AOSD21311C , P0903BDG , AOSD26313C , AOSD32334C , AOSD32338C , AOSP21321 , AOSP32320C , AOSP36326C , AOSP62530 , AOSP62626E .

History: NCE65N1K2F | P0950ETF | MPSW60M086CFD | LNH05R100 | AOW190A60C | TK34A10N1 | 2P308A9

Keywords - AOSD21313C MOSFET datasheet

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