AOSD21313C Specs and Replacement

Type Designator: AOSD21313C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SO8

AOSD21313C substitution

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AOSD21313C datasheet

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 aosd21313c.pdf pdf_icon

AOSD21313C

AOSD21313C 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5.7A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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 aosd21311c.pdf pdf_icon

AOSD21313C

AOSD21311C 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -5A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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 aosd21307.pdf pdf_icon

AOSD21313C

AOSD21307 30V Dual P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -9A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 9.1. Size:687K  aosemi
 aosd26313c.pdf pdf_icon

AOSD21313C

AOSD26313C 30V Complementary MOSFET General Description Product Summary P-Channel N-Channel Latest Advanced Trench Technology VDS= -30V VDS= 30V Low RDS(ON) ID=-5.7A (VGS=-10V) ID= 7A (VGS=10V) High Current Capability RDS(ON) RDS(ON) RoHS and Halogen-Free Compliant ... See More ⇒

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Detailed specifications: AOLF66910, AOSN32128, AOSN32338C, AOSX21319C, AOSX32128, AO4264C, AOSD21307, AOSD21311C, IRF1407, AOSD26313C, AOSD32334C, AOSD32338C, AOSP21321, AOSP32320C, AOSP36326C, AOSP62530, AOSP62626E

Keywords - AOSD21313C MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs