AOSD32338C Specs and Replacement

Type Designator: AOSD32338C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO8

AOSD32338C substitution

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AOSD32338C datasheet

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 aosd32338c.pdf pdf_icon

AOSD32338C

AOSD32338C 30V Dual N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 4A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:326K  aosemi
 aosd32334c.pdf pdf_icon

AOSD32338C

AOSD32334C 30V Dual N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 7A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOSX21319C, AOSX32128, AO4264C, AOSD21307, AOSD21311C, AOSD21313C, AOSD26313C, AOSD32334C, 5N60, AOSP21321, AOSP32320C, AOSP36326C, AOSP62530, AOSP62626E, AOSP66919, AOSP66920, AOSP66923

Keywords - AOSD32338C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.