All MOSFET. AOSD32338C Datasheet

 

AOSD32338C Datasheet and Replacement


   Type Designator: AOSD32338C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SO8
 

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AOSD32338C Datasheet (PDF)

 ..1. Size:332K  aosemi
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AOSD32338C

AOSD32338C30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 4A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:326K  aosemi
 aosd32334c.pdf pdf_icon

AOSD32338C

AOSD32334C30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 7A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AOSX21319C , AOSX32128 , AO4264C , AOSD21307 , AOSD21311C , AOSD21313C , AOSD26313C , AOSD32334C , 13N50 , AOSP21321 , AOSP32320C , AOSP36326C , AOSP62530 , AOSP62626E , AOSP66919 , AOSP66920 , AOSP66923 .

History: IPP60R950C6 | 2SK2422

Keywords - AOSD32338C MOSFET datasheet

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