AOSP32320C Specs and Replacement
Type Designator: AOSP32320C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SO8
AOSP32320C substitution
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AOSP32320C datasheet
aosp32320c.pdf
AOSP32320C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aosp32314.pdf
AOSP32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒
aosp32368.pdf
AOSP32368 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
aosp36326c.pdf
AOSP36326C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AO4264C, AOSD21307, AOSD21311C, AOSD21313C, AOSD26313C, AOSD32334C, AOSD32338C, AOSP21321, SI2302, AOSP36326C, AOSP62530, AOSP62626E, AOSP66919, AOSP66920, AOSP66923, AOSP66925, AOSS21115C
Keywords - AOSP32320C MOSFET specs
AOSP32320C cross reference
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