All MOSFET. AOSP32320C Datasheet

 

AOSP32320C Datasheet and Replacement


   Type Designator: AOSP32320C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8
 

 AOSP32320C substitution

   - MOSFET ⓘ Cross-Reference Search

 

AOSP32320C Datasheet (PDF)

 ..1. Size:322K  aosemi
aosp32320c.pdf pdf_icon

AOSP32320C

AOSP32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:319K  aosemi
aosp32314.pdf pdf_icon

AOSP32320C

AOSP3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V)

 7.2. Size:431K  aosemi
aosp32368.pdf pdf_icon

AOSP32320C

AOSP3236830V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V)

 9.1. Size:326K  aosemi
aosp36326c.pdf pdf_icon

AOSP32320C

AOSP36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AO4264C , AOSD21307 , AOSD21311C , AOSD21313C , AOSD26313C , AOSD32334C , AOSD32338C , AOSP21321 , IRFZ46N , AOSP36326C , AOSP62530 , AOSP62626E , AOSP66919 , AOSP66920 , AOSP66923 , AOSP66925 , AOSS21115C .

History: SSM20P02GH

Keywords - AOSP32320C MOSFET datasheet

 AOSP32320C cross reference
 AOSP32320C equivalent finder
 AOSP32320C lookup
 AOSP32320C substitution
 AOSP32320C replacement

 

 
Back to Top

 


 
.