All MOSFET. AOSP62530 Datasheet

 

AOSP62530 Datasheet and Replacement


   Type Designator: AOSP62530
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: SO8
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AOSP62530 Datasheet (PDF)

 ..1. Size:312K  aosemi
 aosp62530.pdf pdf_icon

AOSP62530

AOSP62530TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power AlphaSGTTM technology ID (at VGS=10V) 5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:329K  aosemi
 aosp62626e.pdf pdf_icon

AOSP62530

AOSP62626ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 9.1. Size:312K  aosemi
 aosp66919.pdf pdf_icon

AOSP62530

AOSP66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.2. Size:268K  aosemi
 aosp66920.pdf pdf_icon

AOSP62530

AOSP66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V)

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Keywords - AOSP62530 MOSFET datasheet

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