AOSP66919 Specs and Replacement

Type Designator: AOSP66919

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: SO8

AOSP66919 substitution

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AOSP66919 datasheet

 ..1. Size:312K  aosemi
 aosp66919.pdf pdf_icon

AOSP66919

AOSP66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:268K  aosemi
 aosp66920.pdf pdf_icon

AOSP66919

AOSP66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 7.2. Size:312K  aosemi
 aosp66923.pdf pdf_icon

AOSP66919

AOSP66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

 7.3. Size:315K  aosemi
 aosp66925.pdf pdf_icon

AOSP66919

AOSP66925 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 11A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOSD26313C, AOSD32334C, AOSD32338C, AOSP21321, AOSP32320C, AOSP36326C, AOSP62530, AOSP62626E, IRF520, AOSP66920, AOSP66923, AOSP66925, AOSS21115C, AOSS21311C, AOSS21319C, AOSS21329, AOSS32128

Keywords - AOSP66919 MOSFET specs

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