AOSP66920 Specs and Replacement
Type Designator: AOSP66920
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 485 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SO8
AOSP66920 substitution
- MOSFET ⓘ Cross-Reference Search
AOSP66920 datasheet
aosp66920.pdf
AOSP66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aosp66923.pdf
AOSP66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aosp66925.pdf
AOSP66925 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 11A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aosp66919.pdf
AOSP66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOSD32334C, AOSD32338C, AOSP21321, AOSP32320C, AOSP36326C, AOSP62530, AOSP62626E, AOSP66919, IRF2807, AOSP66923, AOSP66925, AOSS21115C, AOSS21311C, AOSS21319C, AOSS21329, AOSS32128, AOSS32136C
Keywords - AOSP66920 MOSFET specs
AOSP66920 cross reference
AOSP66920 equivalent finder
AOSP66920 pdf lookup
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AOSP66920 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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