All MOSFET. AOSP66920 Datasheet

 

AOSP66920 Datasheet and Replacement


   Type Designator: AOSP66920
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 485 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO8
 

 AOSP66920 substitution

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AOSP66920 Datasheet (PDF)

 ..1. Size:268K  aosemi
 aosp66920.pdf pdf_icon

AOSP66920

AOSP66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:312K  aosemi
 aosp66923.pdf pdf_icon

AOSP66920

AOSP66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.2. Size:315K  aosemi
 aosp66925.pdf pdf_icon

AOSP66920

AOSP66925TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 11A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.1. Size:312K  aosemi
 aosp66919.pdf pdf_icon

AOSP66920

AOSP66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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Datasheet: AOSD32334C , AOSD32338C , AOSP21321 , AOSP32320C , AOSP36326C , AOSP62530 , AOSP62626E , AOSP66919 , IRFB31N20D , AOSP66923 , AOSP66925 , AOSS21115C , AOSS21311C , AOSS21319C , AOSS21329 , AOSS32128 , AOSS32136C .

History: RJK0392DPA

Keywords - AOSP66920 MOSFET datasheet

 AOSP66920 cross reference
 AOSP66920 equivalent finder
 AOSP66920 lookup
 AOSP66920 substitution
 AOSP66920 replacement

 

 
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