All MOSFET. AOSP66925 Datasheet

 

AOSP66925 Datasheet and Replacement


   Type Designator: AOSP66925
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SO8
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AOSP66925 Datasheet (PDF)

 ..1. Size:315K  aosemi
 aosp66925.pdf pdf_icon

AOSP66925

AOSP66925TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 11A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:268K  aosemi
 aosp66920.pdf pdf_icon

AOSP66925

AOSP66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V)

 6.2. Size:312K  aosemi
 aosp66923.pdf pdf_icon

AOSP66925

AOSP66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 7.1. Size:312K  aosemi
 aosp66919.pdf pdf_icon

AOSP66925

AOSP66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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History: LSF65R570GT | CSD16342Q5A

Keywords - AOSP66925 MOSFET datasheet

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 AOSP66925 equivalent finder
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