AOSS21311C Specs and Replacement

Type Designator: AOSS21311C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23

AOSS21311C substitution

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AOSS21311C datasheet

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 aoss21311c.pdf pdf_icon

AOSS21311C

AOSS21311C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

 6.1. Size:349K  aosemi
 aoss21319c.pdf pdf_icon

AOSS21311C

AOSS21319C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

 7.1. Size:322K  aosemi
 aoss21329.pdf pdf_icon

AOSS21311C

AOSS21329 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.8A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

 8.1. Size:291K  aosemi
 aoss21115c.pdf pdf_icon

AOSS21311C

AOSS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

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Detailed specifications: AOSP36326C, AOSP62530, AOSP62626E, AOSP66919, AOSP66920, AOSP66923, AOSP66925, AOSS21115C, 8N60, AOSS21319C, AOSS21329, AOSS32128, AOSS32136C, AOSS32334C, AOSS32338C, AO3160E, AOT080A60L

Keywords - AOSS21311C MOSFET specs

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