All MOSFET. AOSS32338C Datasheet

 

AOSS32338C Datasheet and Replacement


   Type Designator: AOSS32338C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
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AOSS32338C Datasheet (PDF)

 ..1. Size:338K  aosemi
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AOSS32338C

AOSS32338C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 4A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:332K  aosemi
 aoss32334c.pdf pdf_icon

AOSS32338C

AOSS32334C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:333K  aosemi
 aoss32136c.pdf pdf_icon

AOSS32338C

AOSS32136C20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 6.5A Low Gate Charge RDS(ON) (at VGS=4.5V)

 8.2. Size:305K  aosemi
 aoss32128.pdf pdf_icon

AOSS32338C

AOSS3212820V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=10V) 3.6A Low Gate Charge RDS(ON) (at VGS=4.5V)

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History: MMBFJ177 | NCEP6012AS | BSD316SN | HSBE2730 | MME70R380PRH | 25N10L-TF3-T | LSB55R066GT

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