AOT095A60FDL Specs and Replacement

Type Designator: AOT095A60FDL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: TO220

AOT095A60FDL substitution

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AOT095A60FDL datasheet

 ..1. Size:451K  aosemi
 aot095a60fdl.pdf pdf_icon

AOT095A60FDL

AOT095A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 120A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.1. Size:499K  aosemi
 aot095a60l.pdf pdf_icon

AOT095A60FDL

AOTF095A60L/AOT095A60L/AOB095A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 5.2. Size:499K  aosemi
 aotf095a60l aot095a60l aob095a60l.pdf pdf_icon

AOT095A60FDL

AOTF095A60L/AOT095A60L/AOB095A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

Detailed specifications: AOSS21319C, AOSS21329, AOSS32128, AOSS32136C, AOSS32334C, AOSS32338C, AO3160E, AOT080A60L, IRFZ46N, AOT095A60L, AOT125A60L, AOT160A60L, AOT190A60CL, AOT190A60L, AOT280A60L, AOT29S50L, AOT360A70L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.