AOT095A60FDL Datasheet and Replacement
Type Designator: AOT095A60FDL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO220
- MOSFET Cross-Reference Search
AOT095A60FDL Datasheet (PDF)
aot095a60fdl.pdf

AOT095A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 120A Optimized switching parameters for better EMI RDS(ON),max
aot095a60l.pdf

AOTF095A60L/AOT095A60L/AOB095A60LTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 152A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMS9620S | AM2314NE | WMM11N80M3 | IRFI7536G
Keywords - AOT095A60FDL MOSFET datasheet
AOT095A60FDL cross reference
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History: FDMS9620S | AM2314NE | WMM11N80M3 | IRFI7536G



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