All MOSFET. AOT280A60L Datasheet

 

AOT280A60L Datasheet and Replacement


   Type Designator: AOT280A60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220
 

 AOT280A60L substitution

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AOT280A60L Datasheet (PDF)

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AOT280A60L

AOTF280A60L/AOT280A60L/AOB280A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

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AOT280A60L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 8.2. Size:269K  aosemi
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AOT280A60L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 8.3. Size:245K  inchange semiconductor
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AOT280A60L

isc N-Channel MOSFET Transistor AOT280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

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Datasheet: AO3160E , AOT080A60L , AOT095A60FDL , AOT095A60L , AOT125A60L , AOT160A60L , AOT190A60CL , AOT190A60L , IRFZ48N , AOT29S50L , AOT360A70L , AOT380A60CL , AOT380A60L , AOT450A70L , AOT600A60L , AOT600A70FL , AOT600A70L .

Keywords - AOT280A60L MOSFET datasheet

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