AOT600A60L Datasheet and Replacement
Type Designator: AOT600A60L
Marking Code: T600A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 11.5 nC
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220
AOT600A60L substitution
AOT600A60L Datasheet (PDF)
aot600a60l.pdf
AOTF600A60L/AOT600A60L/AOB600A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max
aot600a70l.pdf
AOTF600A70L/AOT600A70L/AOB600A70LTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
aot600a70fl.pdf
AOTF600A70FL/AOT600A70FLTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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