AOT600A70L Datasheet and Replacement
Type Designator: AOT600A70L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220
AOT600A70L substitution
AOT600A70L Datasheet (PDF)
aot600a70l.pdf

AOTF600A70L/AOT600A70L/AOB600A70LTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
aot600a70fl.pdf

AOTF600A70FL/AOT600A70FLTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max
aot600a60l.pdf

AOTF600A60L/AOT600A60L/AOB600A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOT280A60L , AOT29S50L , AOT360A70L , AOT380A60CL , AOT380A60L , AOT450A70L , AOT600A60L , AOT600A70FL , IRFP064N , AOT66518L , AOT66613 , AOT66616L , AOT66620L , AOT66811L , AOT66914L , AOT66916L , AOT66918L .
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