AOT66616L Specs and Replacement
Type Designator: AOT66616L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.5 nS
Cossⓘ - Output Capacitance: 940 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO220
AOT66616L substitution
- MOSFET ⓘ Cross-Reference Search
AOT66616L datasheet
aot66616l aob66616l.pdf
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aot66616l.pdf
AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aot66613.pdf
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
aot66613l aob66613l.pdf
AOT66613L/AOB66613L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOT380A60CL, AOT380A60L, AOT450A70L, AOT600A60L, AOT600A70FL, AOT600A70L, AOT66518L, AOT66613, IRF3205, AOT66620L, AOT66811L, AOT66914L, AOT66916L, AOT66918L, AOT66919L, AOT66920L, AOT780A70L
Keywords - AOT66616L MOSFET specs
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